Influence of doping concentration on the properties of ZnO:Mn thin films by sol-gel method

Vacuum

Volumn 81, Issue 7, 2007, Pages 894-898

  Chen, Wen ^a   Wang, Jing ^a   Wang, Min rui ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

(0 0 2) peaks; Doping concentration; Mn; Resistivity; XPS; ZnO thin films

Indexed keywords

BINDING ENERGY; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); MANGANESE; SOL-GELS; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

(0 0 2) PEAKS; DOPING CONCENTRATION; ELEMENT BINDING ENERGY; ZNO THIN FILMS;

THIN FILMS;

EID: 33846885255     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2006.10.010     Document Type: Article

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