Electron band alignment between (100)InP and atomic-layer deposited Al 2O3

Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

  Chou, Hsing Yi ^a   Afanas'Ev, V V ^a   Stesmans, A ^a   Lin, H C ^b   Hurley, P K ^c   Newcomb, S B ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d Glebe Scientific Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHARGE INSTABILITIES; CONDUCTION BAND OFFSET; ELECTRON BANDS; INP; INTERNAL PHOTOEMISSION; WIDE GAP;

CONDUCTION BANDS; ELECTRON MOBILITY;

HETEROJUNCTIONS;

EID: 77957681417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3496039     Document Type: Article

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