Stable, freestanding Ge nanocrystals

Journal of Applied Physics

Volumn 97, Issue 12, 2005, Pages

  Sharp, I D ^c   Xu, Q ^c   Liao, C Y ^c   Yi, D O ^a,b   Beeman, J W ^a   Liliental Weber, Z ^a   Yu, K M ^a   Zakharov, D N ^a   Ager III, J W ^a   Chrzan, D C ^a   Haller, E E ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-DIFFRACTION PATTERNS; NANOWIRES; SURFACE CHARACTERIZATION; SURFACE RECONSTRUCTION-INDUCED DISORDER;

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; ELECTRONIC DENSITY OF STATES; ETCHING; GERMANIUM; INTEGRATED OPTOELECTRONICS; ION IMPLANTATION; PARTICLE SIZE ANALYSIS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SILICON WAFERS; SOLID STATE DEVICES; SYNTHESIS (CHEMICAL); ULTRASONIC CLEANING;

NANOSTRUCTURED MATERIALS;

EID: 21644485442     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1942629     Document Type: Article

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