Carbon nanotube field effect transistor measurements in vacuum

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Volumn , Issue , 2010, Pages 224-228

  Yahya, Iskandar ^a,b   Stolojan, V ^b   Clowes, Steven ^b   Mustaza, S M ^a   Silva, S R P ^b  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; ACTIVE CHANNELS; AMBIENT AIR; AMBIPOLAR BEHAVIOR; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; HIGH VACUUM; IN-VACUUM; OFF CURRENT; P-TYPE; TERMINAL MEASUREMENTS;

CARBON NANOTUBES; SINGLE-WALLED CARBON NANOTUBES (SWCN); VACUUM;

FIELD EFFECT TRANSISTORS;

EID: 77957571612     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMELEC.2010.5549562     Document Type: Conference Paper

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