Impact of body doping and thickness on the performance of germanium-Source TFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1710-1713

  Kim, Sung Hwan ^a   Jacobson, Zachery A ^a   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Band to band tunneling (BTBT); germanium; tunnel field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; BAND-TO-BAND TUNNELING (BTBT); BODY DESIGN; BODY DOPING; DEVICE SIMULATIONS; EXPERIMENTAL DATA; FULLY DEPLETED; LEAKAGE MECHANISM; SOURCE REGION; TRANSISTOR PERFORMANCE;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; LITHIUM BATTERIES; MACHINE DESIGN; TUNNELING (EXCAVATION);

GERMANIUM;

EID: 77954035145     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049215     Document Type: Article

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