E-beam inspection of SOI wafers for the evaluation of barrier nitride RIE etching

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn , Issue , 2005, Pages 125-127

  Ache, Alexander ^a   Wu, Kevin ^b   Rowand, Nicole ^a  

^a IBM   (United States)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

E Beam Inspection (EBI); Nitride; Reactive Ion Etch (RIE); Silicon on Insulator (SOI); Underetch; Voltage Contrast (VC)

Indexed keywords

ELECTRON BEAMS; INTERCONNECTION NETWORKS; REACTIVE ION ETCHING; SILICON WAFERS; TUNGSTEN;

ELECTRICAL DEFECTIVITY; ELECTRICALLY ACTIVE DEFECTS; ELECTRON BEAM INSPECTION (EBI); SILICON-ON-INSULATOR (SOI) WAFERS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 27644503614     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)