Early detection of crystal defects in the device process flow by electron beam inspection

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn 2006, Issue , 2006, Pages 334-339

  Moreau, O ^a   Kang, A ^a   Mantovani, V ^b   Mica, I ^b   Polignano, M L ^b   Avaro, L ^b   Pastore, C ^b   Pavia, G ^b  

^a KLA TENCOR CORPORATION   (United States)

^b STMICROELECTRONICS   (Italy)

Author keywords

Dislocations; e beam inspection; Leakage current; Voltage contrast detection

Indexed keywords

CORRELATION METHODS; DEFECTS; ELECTRON BEAMS; INSPECTION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; VOLTAGE CONTROL;

DISLOCATIONS; E BEAM INSPECTION; VOLTAGE CONTRAST DETECTION;

CRYSTAL DEFECTS;

EID: 33751434777     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2006.1638779     Document Type: Conference Paper

References (5)

1. P.Ferreira, R.A.Bianchi, F. Guyader, R. Pantel and E.Granger, "Elimination of stress-induced silicon defects in very high density SRAM structures", Proceedings of the 31st European Solid-state device research conference, Nuremberg, Germany, 2001
2. I.Mica, M. L. Polignano, M. Brambilla, G. P. Carnevale, P. Ghezzi, T. Ghilardi, M. Martinelli, E. Bonera, "Crystal defects and junction properties in the evolution of device fabrication technology", J. Phys.: Condens. Matter, Vol. 14, n. 48, 13403-13410, December 2002
3. I. Mica, M.L. Polignano, G.P. Carnevale, M. Brambilla, F. Cazzaniga, G. Pavia, V. Soncini, "The dislocation generation in the device process fabrication", Solid-State Phenomena, Diffusion and Defect Data Part B, Vol. 95-96, 2004, pp. 439-445
4. F. Secco d'Aragona "Dislocation etch for (100) planes in Silicon", J.Electrochem. Soc. pages 948-951, (1972).
5. A. Ache, N. Rowland, K. Wu "Production implementation of state-of-the-art electron beam inspection", Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop 4-6 May 2004, pp:344-347