Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn 2000-January, Issue , 2000, Pages 153-156

  Liu, Y H ^a   Tu, Y L ^a   Lain, W Y ^a   Chan, B W ^a   Chi, M ^a  

^a Science Based Industrial Park   (Taiwan)

Author keywords

Argon; Etching; Gaussian processes; Manufacturing industries; Manufacturing processes; Plasma measurements; Polymers; Protection; Radio frequency; Semiconductor device manufacture

Indexed keywords

ARGON; ETCHING; FLOW OF GASES; MANUFACTURE; POLYMERS; SEMICONDUCTOR DEVICES;

GAUSSIAN PROCESSES; MANUFACTURING INDUSTRIES; MANUFACTURING PROCESS; PLASMA MEASUREMENT; PROTECTION; RADIO FREQUENCIES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 77957566678     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2000.902578     Document Type: Conference Paper

References (4)

1. Y. Iwima, Y. Ihikawa, C.I. Yang, M. Chang, and H. Okano, "Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self-aligned contact etch", Jpn. J. Appl. Physics 36, p.5498-5501, 1997.
2. 2-to-Si mechanism", J. Vacuum. Science and Technology, A17(1), p.26-37, 1999.
3. W. Futo, K. Fukuda, K. Hashimoto and K. Watanable, "Polymer control with CH2F2 addition for self-aligned-contact 9SAC) etching into narrow slit", Dry Process Symposium, paper#IV-14, p.169-174, 1997.
4. D.R. Luk, ed. "Handbook of Chemistry and Physics", CRC Press, Boca Raton, 1995.