Characterization of copper voids in Damascene processes

IEEE Transactions on Semiconductor Manufacturing

Volumn 17, Issue 4, 2004, Pages 597-602

  Guldi, Richard L ^a   Shaw, Judy B ^a   Ritchison, Jeffrey ^a   Corum, Daniel L ^a   Oestreich, Steven ^b   Sherman, Kara ^c   Lin, Jason H ^b   Fiordalice, Robert ^c  

^a TEXAS INSTRUMENTS   (United States)

^b KLA TENCOR CORPORATION   (United States)

^c KLA Tencor Austin   (United States)

Author keywords

Copper detectivity; Copper inspection; Damascene; Defect source partitioning; E beam inspection

Indexed keywords

ELECTRON BEAMS; INTEGRATED CIRCUITS; PITTING; PREVENTIVE MAINTENANCE; PROCESS CONTROL; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE;

COPPER DEFECTIVITY; COPPER INSPECTION; DAMASCENE; DEFECT SOURCE PARTITIONING; E-BEAM INSPECTION;

COPPER;

EID: 9144250423     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.835721     Document Type: Article

References (3)

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2. A. E. Miller, P. B. Fischer, A. D. Feller, and K. C. Cadien, "Chemically induced defects during copper polish," in Proc. IEEE Int. Interconnect Technology Conf., 2001, pp. 143-145.
3. J. P. Lu, L. Chen, D. Gonzalez, H. L. Quo, D. J. Rose, M. Marudachalam, W. Y. Hsu, H. Y. Liu, F. Cataldi, B. Chatterjee, P. B. Smith, P. Holverson, R. L. Guldi, N. M. Russell, G. Shinn, S. Zuhoski, and J. D. Luttmer, "Understanding and eliminating one of the most important types of defects in electroplated Cu films," in Proc. IEEE Int. Interconnect Technology Conf., 2001, pp. 280-282.