Surface morphology and conductivity of zirconium-doped nanostructured indium oxide films with various crystallographic features

Ceramics International

Volumn 36, Issue 5, 2010, Pages 1743-1747

  Liang, Yuan Chang ^a  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

Author keywords

A. Films; B. Non destructive evaluation; E. Electrodes

Indexed keywords

ALUMINUM; ATOMIC FORCE MICROSCOPY; EPILAYERS; EPITAXIAL GROWTH; MAGNETRON SPUTTERING; NONDESTRUCTIVE EXAMINATION; SUBSTRATES; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY; THIN FILMS; TOPOGRAPHY;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT DISTRIBUTION; E. ELECTRODES; INDIUM OXIDE FILMS; ISLAND-LIKE STRUCTURES; NON DESTRUCTIVE EVALUATION; POLYCRYSTALLINE FILM; RF-MAGNETRON SPUTTERING;

OXIDE FILMS;

EID: 77957359814     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2010.03.004     Document Type: Article

References (19)

1. 3 capacitors on composite transparent electrodes, Scr. Mater. 61 (2009) 117-120.
2. 3/ZnO bilayer films, J. Cryst. Growth 310 (2008) 3741-3745.
3. C.C. Liu, Y.C. Liang, C.C. Kuo, Y.Y. Liou, J.W. Chen, C.C. Lin, Fabrication and opto-electric properties of ITO/ZnO bilayer films on polyethersulfone substrates by ion beam-assisted evaporation, Solar Energy Mater. Solar Cells 93 (2009) 267-272.
4. N. Raghu, T.R.N. Kutty, Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics, Appl. Phys. Lett. 60 (1992) 100-102.
5. H.M. Zhou, D.Q. Yi, Z.M. Yu, L.R. Xiao, J. Li, Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties, Thin Solid Films 515 (2007) 6909-6914. (Pubitemid 46670150)
6. Y.C Liang, Y.C. Liang, Physical properties of low temperature sputteringdeposited zirconium-doped indium oxide films at various oxygen partial pressures, Appl. Phys. A: Mater. Sci. Process. 97 (2009) 249-255.
7. D.H. Kim, N.G. Cho, H.G. Kim, W.Y. Cho, Structural and electrical properties of indium doped ZnO thin films fabricated by RF magnetron sputtering, J. Electrochem. Soc. 154 (2007) H939-H943. (Pubitemid 47501805)
8. A.V. Mudryi, A.V. Ivaniukovich, A.G. Ulyashin, Deposition by magnetron sputtering and characterization of indium tin oxide thin films, Thin Solid Films 515 (2007) 6489-6492. (Pubitemid 46660937)
9. N. Taga, H. Odaka, Y. Shigesato, I. Yasui, M. Kamei, Electrical properties of heteroepitaxial grown tin-doped indium oxide films, J. Appl. Phys. 80 (1996) 978-984. (Pubitemid 126571880)
10. 3 films prepared at different substrate temperatures, Mater. Lett. 61 (2007) 4309-4313. (Pubitemid 47058604)
11. J.W.P. Hsu, M.J. Manfra, D.V. Lang, S. Richter, S.N.G. Chu, A.M. Sergent, R.N. Kleiman, L.N. Pfeiffer, R.J. Molnar, Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes, Appl. Phys. Lett. 78 (2001) 1685-1687. (Pubitemid 33598270)
12. [12] C.H. Yi, I. Yasui, Y. Shigesato, Oriented tin-doped indium oxide films on 〈0 0 1〉 preferred oriented polycrystalline ZnO films, Jpn. J. Appl. Phys. 34 (1995) 1638-1642.
13. 3 single-crystalline film on sapphire (0 0 0 1) substrate by molecular beam epitaxy, J. Cryst. Growth 289 (2006) 686-689. (Pubitemid 43374803)
14. 3 epilayers and heterostructures, J. Electrochem. Soc. 154 (2007) P147-P151.
15. 3 substrates, J. Cryst. Growth 304 (2007) 275-280.
16. 2(1 0 0) by oxygen plasma assisted molecular beam epitaxy, Thin Solid Films 517 (2009) 4286-4294.
17. R.P. Karunasiri, R. Bruinsma, J. Rudnick, Thin-film growth and the shadow instability, Phys. Rev. Lett. 62 (1989) 788-791.
18. M. Kamei, Y. Shigesato, S. Takaki, Origin of characteristic grain-subgrain structure of tin-doped indium oxide films, Thin Solid Films 259 (1995) 38-45.
19. x electrical behavior on post-deposition annealing temperature, Microelectron. Eng. 72 (2004) 191-196.