Low-frequency noise in amorphous indium-gallium-zinc oxide thin-film transistors from subthreshold to saturation

Applied Physics Letters

Volumn 97, Issue 12, 2010, Pages

  Park, Jae Chul ^a   Kim, Sang Wook ^a   Kim, Chang Jung ^a   Kim, Sungchul ^b   Kim, Dae Hwan ^b   Cho, In Tak ^c   Kwon, Hyuck In ^d  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kookmin University   (South Korea)

^c Seoul National University   (South Korea)

^d Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BULK MOBILITY; CARRIER NUMBER FLUCTUATION; CHANNEL LENGTH; LOW-FREQUENCY NOISE; OPERATION REGIME; SATURATION REGIME; SUBTHRESHOLD;

AMORPHOUS FILMS; GALLIUM; INDIUM; THERMAL NOISE; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

CARRIER MOBILITY;

EID: 77957170573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3491553     Document Type: Article

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