Conduction and 1/f noise analysis in amorphous silicon thin-film transistors

Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 923-928

  Valenza, M ^a   Barros, C ^a   Dumas, M ^a   Rigaud, D ^a   Ducourant, T ^b   Szydlo, N ^c   Lebrun, H ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b Départment TIV   (France)

^c Thomson LCD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009014545     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360873     Document Type: Article

References (10)

1. T. Leroux, Solid-State. Electron. 29, 47 (1986).
2. S. Kishida, Y. Naruke, Y. Uchida, and M. Matsumura, Jpn. J. Appl. Phys. 22, 511 (1983).
3. A. Rolland, Ph.D. thesis, Université de Rennes, France, April 1993.
4. A. L. Mc Whorter, in Semiconductor Surface Physics, edited by R. H. Kingston (University of Pennsylvania Press, Philadelphia, 1957), p. 207.
5. F. N. Hooge, Phys. Lett. 29A, 139 (1969).
6. F. N. Hooge, Physica 60, 130 (1972).
7. M. Valenza, C. Barros, M. Dumas, and D. Rigaud, in Proceedings of the International Nodito Workshop, edited by J. Sikula and P. Schauer, Brno, Czech Republic, 18-20 July 1995, pp. 67-73.
8. A. Hoffmann, M. Valenza, D. Rigaud, and L. K. J. Vandamme, in Pro- ceedings of the International Conference on Noise in Physical Systems and I/f Fluctuations, edited by P. H. Handel and A. L. Chung, St. Louis, MO, August 1993, pp. 362-364.
9. L. K. J. Vandamme, IEEE Trans. Electron Devices ED-41, 2176 (1994).
10. A. Hoffmann, M. Valenza, and D. Rigaud, in Proceedings of the 4th European Symposium on Reliability of Electron Devices, edited by A. Touboul and N. Labat, Bordeaux-Arcachon, France, 4-7 October 1993, pp. 351-356.