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Applied Physics Letters

Volumn 97, Issue 12, 2010, Pages

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

(7) Plis, Elena a Myers, S a Kutty, M N a Mailfert, J a,b Smith, E P c Johnson, S c Krishna, S a

a MSC01 1070 (United States)

b IRISA (France)

c RAYTHEON COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED BIAS; BARRIER LAYERS; DETECTOR PERFORMANCE; DIFFUSION LENGTH; HIGH TEMPERATURE; I-V MEASUREMENTS; LATERAL DIFFUSION; LIMITING FACTORS; MIDWAVE INFRARED; MINORITY CARRIER; MOLE FRACTION; TEMPERATURE DEPENDENT;

DETECTORS; OPTOELECTRONIC DEVICES;

DIFFUSION BARRIERS;

EID: 77957127384 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3492853 Document Type: Article

Times cited : (45)

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