SCOPUS 정보 검색 플랫폼

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

Suppression of leakage currents in InAsSb MWIR photodiodes by chemical treatment and illumination

(6) Shafir, I a,b Katz, M a Sher, A a Raizman, A a Zussman, A a Nathan, M b

a Electro Optics Division (Israel)

b TEL AVIV UNIVERSITY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON ION; BLIP TEMPERATURES; BULK MATERIALS; CHEMICAL TREATMENTS; DETECTIVITY; DEVICE PERFORMANCE; INAS; INTERNAL QUANTUM EFFICIENCY; MID-WAVELENGTH INFRARED; MOCVD; NOVEL SURFACES; ORDERS OF MAGNITUDE; P-N JUNCTION; TARTARIC ACIDS; WHITE LIGHT; ZERO-BIAS RESISTANCE AREA PRODUCT;

ARGON; CHEMICAL VAPOR DEPOSITION; INFRARED RADIATION; LEAKAGE CURRENTS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

SURFACE TREATMENT;

EID: 77950958280 PISSN: 02681242 EISSN: 13616641 Source Type: Journal
DOI: 10.1088/0268-1242/25/4/045004 Document Type: Article

Times cited : (11)

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