Design and fabrication of infrared detectors based on lattice-matched InAs0.91Sb0.09 on GaSb

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 20, Issue 3-4, 2004, Pages 519-522

  Reverchon, J L ^a   Carras, M ^b   Marre, G ^a   Renard, C ^a   Berger, V ^b   Vinter, B ^a   Marcadet, X ^a  

^a Thales Research an Technology   (France)

^b UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

Etching; III V semiconductor p n diodes and heterojunctions; Optoelectronic device characterization; Patterning; Surface cleaning

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; ETCHING; HETEROJUNCTIONS; ION BEAMS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

ION BEAM ETCHING (IBE); PHOTOVOLTAIC DETECTORS;

INFRARED DETECTORS;

EID: 0346498086     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.09.001     Document Type: Conference Paper

References (10)

1. Rakovska A., Berger V., Marcadet X., Vinter B., Glastre G., Oksenhendler T., Kaplan D. Appl. Phys. Lett. 77:2000;397.
2. Rogalski A. Infrared Detectors. 2000;Gordon & Breach Science Publishers, London.
3. Marcadet X., Rakovska A., Prevot I., Glastre G., Vinter B., Berger V. J. Cryst. Growth. 227:2001;609.
4. Rakovska A., Berger V., Marcadet X., Vinter B., Bouzehouane K., Kaplan D. Semicond. Sci. Technol. 15:2000;34.
5. Vinter B. Phys. Rev. (B). 66:2002;1-045324.
6. G. Marre, B. Vinter, V. Berger, Semicond. Sci. Technol. (2003).
7. Bell G.R., Jones T.S., McConville C.F. Appl. Phys. Lett. 25:1997;3688.
8. Pearton S.J., Chakrabarti U.K., Hobson S.W., Perley A.P. J. Electrochem. Soc. 137:1990;3188.
9. Zhang L., Lester L.F., Shul R.J., Willison C.G., Leavitt R.P. J. Vac. Sci. Technol. B. 17:1999;965.
10. Frost F., Lippold G., Schindler A., Bigl F. J. Appl. Phys. 85:1999;8378.