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Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4858-4861

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

(4) Pitts, O J a Lackner, D a Cherng, Y T a Watkins, S P a

a SIMON FRASER UNIVERSITY (Canada)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Infrared devices

Indexed keywords

CRYSTAL GROWTH; ELECTRIC CURRENTS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HETEROJUNCTIONS; INFRARED DETECTORS; INFRARED DEVICES; LITHOGRAPHY; MAGNETIC FIELD EFFECTS; METALLIC COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTOR GROWTH; VAPORS;

A3. METALORGANIC VAPOR PHASE EPITAXY; ACCUMULATION LAYERS; APPLICATIONS.; B1. ANTIMONIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. INFRARED DEVICES; HALL EFFECT MEASUREMENTS; HETEROJUNCTION DEVICES; HOMO JUNCTIONS; INFRARED PHOTO DETECTORS; IR DETECTORS; MESA DIODES; METAL ORGANIC; MISCIBILITY GAPS; OPTICAL LITHOGRAPHIES; ROOM TEMPERATURES; STRUCTURAL QUALITIES; WET CHEMICALS;

GALLIUM ALLOYS;

EID: 56249094814 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.015 Document Type: Article

Times cited : (13)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.