Interface band gap engineering in InAsSb photodiodes

Applied Physics Letters

Volumn 87, Issue 10, 2005, Pages

  Carras, M ^a   Reverchon, J L ^a   Marre, G ^a   Renard, C ^a   Vinter, B ^a   Marcadet, X ^a   Berger, V ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE BAND GAP ENGINEERING; NONCRYOGENICS; QUANTUM DETECTORS;

BAND STRUCTURE; CRYOGENICS; HETEROJUNCTIONS; INFRARED DETECTORS; INFRARED IMAGING; OPTIMIZATION;

PHOTODIODES;

EID: 24644500186     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2041818     Document Type: Article

References (6)

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