Temperature dependence of resistance switching in Cr doped SrZrO 3 thin films

Journal of the Korean Physical Society

Volumn 51, Issue 3, 2007, Pages 1089-1092

  Kim, Mooyoung ^a   Kim, Hyungsang ^a   Kim, Yongmin ^a   Jung, Woong ^a   Im, Hyunsik ^a   Jung, Kyooho ^a,b   Lee, Jeon Kook ^b  

^a Dongguk University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Non volatile memory; Perovskite material; Resistive switching

Indexed keywords

EID: 34948897515     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.51.1089     Document Type: Article

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