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Volumn 13, Issue 11, 2010, Pages

Investigations of ZnO Nanowires and ZnO/p-GaN heterojunction diodes grown by different aqueous solutions zinc nitrate and zinc acetate

(7) Lan, C H a Hwang, J D b Chang, S J a Liao, J S b Cheng, Y C c Lin, W J c Lin, J C c

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL CHIAYI UNIVERSITY (Taiwan)

c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; AVERAGE DIAMETER; ELECTRICAL PERFORMANCE; HETEROJUNCTION DIODES; IDEALITY FACTORS; REVERSE-BIAS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; TURN ON VOLTAGE; ZINC ACETATE; ZINC NITRATES; ZNO; ZNO NANOWIRES;

ELECTRIC WIRE; GALLIUM NITRIDE; HETEROJUNCTIONS; NANOWIRES; NITRATES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES; SOLUTIONS; SURFACE DEFECTS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ZINC;

EID: 77956591229 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3478553 Document Type: Article

Times cited : (8)

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