Investigations on the ruggedness limit of 6.5 kV IGBT

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 71-74

  Bauer, J G ^a   Schilling, O ^b   Schaeffer, C ^c   Hille, F ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Eupec GmbH   (Germany)

^c INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POWER GENERATION; VOLTAGE CONTROL;

CELL DESIGN; HOLE CURRENT DENSITY; RUGGEDNESS; SAVE OPERATING AREA (SOA);

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 27744488548     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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2. K. Mochizuki, E. Suekawa, S. Iura and K. Satoh, "Development of 6.5 kV class IGBT with wide safety operation area," Proc. PCC, 2002, pp. 248-252.
3. R. Natarajan and T.P. Chow, "Conductivity Modulation Improvement in 6.5kV Trench UMOS Insulated Gate Bipolar Transistors," Proc. ISPSD, 2002, pp.121-124.
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8. M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach and S. Linder, "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes," Proc. ISPSD, 2004, pp.437-440.
9. M. Otsuki, Y. Onozawa, S. Yoshiwatari and Y. Seki, "1200V FS-IGBT module with enhanced dynamic clamping capability," Proc. ISPSD, 2004, pp. 339-342.