Investigations on 6.5kV trench IGBT and adapted EmCon diode

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 5-8

  Bauer, J G ^a   Duetemeyer, T ^a   Falck, E ^a   Schaeffer, C ^b   Schmidt, G ^b   Schulze, H ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC LOSSES; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SWITCHING; TECHNOLOGY TRANSFER;

SWITCHING LOSSES; TRENCH TECHNOLOGY;

DIODES;

EID: 36248931923     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294918     Document Type: Conference Paper

References (9)

1. M. Pfaffenlehner, T. Laska, R. Mallwitz, A.Mauder, F. Pfirsch, C. Schaeffer, "1700V-IGBT3: Field Stop Technology with Optimized Trench Structure - Trend setting for The High Power Applications in Industry and Traction," Proc. ISPSD, 2002, pp. 105-109.
2. M. Pfaffenlehner, J. Biermann, C. Schaeffer, H. Schulze, "New 3000Vchip Generation with a Trench IGBT and an Optimized Field Stop Concept with a Smoot Switching Behavior," Proc. ISPSD, 2004, pp.107-110.
3. R. Natarajan and T.P. Chow, "Conductivity Modulation Improvement in 6.5kV Trench UMOS Insulated Gate Bipolar Transistors," Proc. ISPSD, 2002, pp.121-124.
4. J.G. Bauer, F. Auerbach, A. Porst, R. Roth, H. Ruething and O. Schilling, "6.5kV-Moduldes using IGBTs with Field Stop Technology," Proc. ISPSD, 2001, pp.121-124.
5. J.G. Bauer, O. Schilling, C.Schaeffer, F.Hille, "Investigations on the Ruggedness Limit of 6.5 kV IGBT, "Proc. ISPSD, 2005, pp. 71-74.
6. M. Rahimo, A. Kopta, S. Linder, "Novel Enhanced-Planar IGBT Technology Rated up to 6.5KV for Lower Losses and Higher SOA Capability," Proc. ISPSD, 2006, pp. 69-72.
7. A.Müller-Dauch, F.Pfirsch, M.Pfaffenlehner, D. Silber, "Source Side Thermal Runaway of Trench IGBTs, Dependence on Design Aspects," Proc. ISPSD, 2006, pp 21-24.
8. M. Rahimo, A. Kopta, S. Eicher, U. Schlapbach and S. Linder, "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes," Proc. ISPSD, 2004, pp.437-440
9. M. Otsuki, Y. Onozawa, S.Yoshiwatari, and Y. Seki, "1200V FS-IGBT module with enhanced dynamic clamping capability," Proc. ISPSD, 2004, pp. 339-342.