Design consideration and demonstration of resonant-cavity-enhanced quantum dot infrared photodetectors in mid-infrared wavelength regime (3-5 μm)

IEEE Journal of Quantum Electronics

Volumn 46, Issue 10, 2010, Pages 1484-1491

  Asano, Tetsuya ^a   Hu, Chong ^b   Zhang, Yi ^a   Liu, Mingguo ^c   Campbell, Joe C ^b   Madhukar, Anupam ^a  

^a University of Southern California   (United States)

^b University of Virginia   (United States)

^c Amonix Inc   (United States)

Author keywords

III V compound semiconductor; Infrared detectors; Quantum dot infrared photodetector; Resonant cavityenhanced photodetectors; Self assembled quantum dot

Indexed keywords

ACCUMULATED STRAIN; BACK MIRRORS; CONFINING LAYERS; DEFECT-FREE; DESIGN CONSIDERATIONS; DETECTIVITY; GAAS SURFACES; III-V COMPOUND SEMICONDUCTOR; INTRABAND PHOTOCURRENTS; LATTICE-MISMATCHED; MID-INFRARED WAVELENGTHS; MIDINFRARED; OPTICAL FIELD; OPTICAL PATH LENGTHS; QUANTUM DOT INFRARED PHOTODETECTOR; QUANTUM DOT LAYERS; QUANTUM DOTS; RESONANT CAVITY; RESONANT CAVITY ENHANCED; RESONANT-CAVITYENHANCED PHOTODETECTORS; SELF ASSEMBLED QUANTUM DOTS; SHORT PERIOD SUPERLATTICE; STRUCTURAL DEFECT;

CAVITY RESONATORS; DEFECTS; DETECTORS; ELECTRIC FIELDS; GEOMETRICAL OPTICS; INFRARED DETECTORS; INFRARED LASERS; MIRRORS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 77956541158     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2052351     Document Type: Article

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