Applications of lead-salt microactivities for mid-infrared devices

IEE Proceedings: Optoelectronics

Volumn 150, Issue 4, 2003, Pages 332-336

  Heiss, W ^a   Boberl M ^a   Schwarzl, T ^a   Springholz, G ^a   Furst J ^b   Pascher, H ^b  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b UNIVERSITY OF BAYREUTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; INFRARED DETECTORS; LIGHT INTERFERENCE; MIRRORS; OPTICAL PUMPING; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES;

BRAGG INTERFERENCE MIRROR; CAVITY RESONANCE; LEAD-SALT MICROCAVITY; MID-INFRARED DEVICE; QUANTUM DOT SIZE DISTRIBUTION;

SEMICONDUCTOR LASERS;

EID: 0345328318     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030790     Document Type: Article

References (25)

1. Findlay, P.C., Pidgeon, C.R., Kotitschke, R., Hollingworth, A., Murdin, B.N., Langerak, C.J.G.M., Van Der Meer, A.F.G., Ciesla, C.M., Oswald, J., Homer, A., Springholz, G., and Bauer, G.: 'Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation', Phys. Rev. B, Condens. Matter, 1998, 58, (19), pp. 12908-12915
2. Feit, Z., McDonald, M., Woods, R.J., Archambault, V., and Mak, P.: 'Low threshold PbEuSeTe/PbTe separate confinement buried heterostructure diode lasers', Appl. Phys. Lett., 1996, 68, (6), pp. 738-740
3. 2 high-resolution spectroscopy', Appl. Phys. Lett., 1991, 58, (4), pp. 343-345
4. Holloway, H.: 'Quantum efficiencies of thin-film IV-VI semiconductor photodiodes', J. Appl. Phys., 1979, 50, (3), pp. 1386-1398
5. 0.2Te liquid phase epitaxy', Infrared Phys., 1976, 16, (5), pp. 509-514
6. Tacke, M.: 'New developments and applications of tunable IR lead salt lasers', Infrared Phys. Technol., 1995, 36, (1), pp. 447-463
7. Preier, H.: 'Recent advances in lead-chalcogenide diode lasers', Appl. Phys., 1979, 20, (3), pp. 189-206
8. Rarity, J., and Weisbuch, C.: 'Microcavities and photonic bandgaps: physics and applications' (Kluwer Academic Publishers, Dordrecht, 1995)
9. Shore, K.A., and Ogura, M.: 'Threshold characteristics of microcavity semiconductor lasers', Opt. Quantum Electron., 1992, 24, (2), pp. 209-213
10. Hunt, N.E.J., Schubert, E.F., Logan, R.A., and Zydzik, G.J.: 'Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant-cavity light-emitting diode', Appl. Phys. Lett., 1992, 61, (19), pp. 2287-2289
11. Schubert, E.F., Wang, Y.H., Cho, A.Y., Tu, L.W., and Zydzik, G.J.E.F.: 'Resonant cavity light-emitting diode', Appl. Phys. Lett., 1992, 60, (8), pp. 921-923
12. Andreev, V.M.: 'Heterostructure solar cells', Semiconductors, 1999, 33, (9), pp. 942-945
13. Schwarzl, T., Heiss, W., and Springholz, G.: 'Ultra-high-finesse IV-VI microcavities for the midinfrared', Appl. Phys. Lett., 1999, 75, (9), pp. 1246-1248
14. Fürst, J., Pascher, H., Schwarzl, T., Böberl, M., Springholz, G., and Bauer, G.: 'Midinfrared IV-VI vertical-cavity surface emitting lasers with zero-, two- and three-dimensional systems in the active regions', Appl. Phys. Lett., 2002, 81, (2), pp. 208-210
15. Heiss, W., Schwarzl, T., Springholz, G., Biermann, K., and Reimann, K.: 'Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers', Appl. Phys. Lett., 2001, 78, (7), pp. 862-864
16. Zhao, F., Wu, H., Jayasinghe, L., and Shi, Z.: 'Above-room-temperature optically pumped 4.12 μm midinfrared vertical-cavity surface-emitting lasers', Appl. Phys. Lett., 2002, 80, (7), pp. 1129-1131
17. Heiss, W., Schwarzl, T., Roither, J., Springholz, G., Aigle, M., Pascher, H., Biermann, K., and Reimann, K.: 'Epitaxial Bragg mirrors for the mid-infrared and their applications', Prog. Quantum Electron., 2001, 25, (5-6), pp. 193-228
18. Holy, V., Springholz, G., Pinczolits, M., and Bauer, G.: 'Strain induced vertical and lateral correlations in quantum dot superlattices', Phys. Rev. Lett., 1999, 83, (2), pp. 356-359
19. Springholz, G., Holy, V., Pinczolits, M., and Bauer, G.: 'Self-organized growth of three-dimensional quantum-dot crystals with fcc-like stacking and a tunable lattice constant', Science, 1998, 282, (5389), pp. 734-737
20. x/Te quantum-dot superlattices', Phys. Rev. B, Condens. Matter., 1999, 60, (16), pp. 11524-11529
21. Schwarzl, T., Heiss, W., Springholz, G., Krenn, H., Fromherz, T., Raab, A., and Vavra, I.: 'Mid-infrared absorption of PbSe/PbEuTe quantum dot superlattices in IV-VI microcavities', Phys. Rev. B, 2002, 65, pp. 245321-245329
22. xTe multiple-quantum-well structures', Phys. Rev. B, 1994, 49, (8), pp. 5476-5489
23. Marzin, J.Y., Gerard, J.M., Izrael, A., Barrier, D., and Bastard, G.: 'Photoluminescence of single InAs quantum dots obtained by self-organized growth on GaAs', Phys. Rev. Lett., 1994, 73, (5), pp. 716-719
24. Solomon, G.S., Trezza, J.A., Marshall, A.F., and Harris, J.S. Jr: 'Vertically aligned and electronically coupled growth induced InAs islands in GaAs', Phys. Rev. Lett., 1996, 76, (6), pp. 952-955
25. Mackowski, S., Karczewski, G., Wojtowict, T., Kossut, J., Kret, S., Szcepanska, A., Dluzewski, P., Prechtl, G., and Heiss, W.: 'Structural and optical evidence of island correlation in CdTe/ZnTe superlattices', Appl. Phys. Lett., 2001, 78, (24), pp. 3884-3886