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Volumn 14, Issue 6, 1996, Pages 1081-1089

High-finesse resonant-cavity photodetectors with an adjustable resonance frequency

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; FIBER OPTIC NETWORKS; NATURAL FREQUENCIES; OPTICAL COMMUNICATION EQUIPMENT; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030164838     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.511609     Document Type: Article
Times cited : (35)

References (20)
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    • H. Wada, Y. Ogawa, and T. Kamijoh, "Electrical characteristics of directly-bonded GaAs and InP," Appl. Phys. Lett., vol. 62, pp. 738-740, 1993.
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    • Refractive indices of III-V compounds: Key properties of InGaAsP relevant to device design
    • _, "Refractive indices of III-V compounds: Key properties of InGaAsP relevant to device design," J. Appl. Phys., vol. 53, pp. 5863-5869, 1982.
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    • A tanh substitution for the analysis of abrupt and graded interface multilayer dielectric stacks
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.