SCOPUS 정보 검색 플랫폼

ECS Transactions

Volumn 28, Issue 4, 2010, Pages 33-44

Epitaxial growth of ZnO on LiAlO2 and LiGaO2 substrates by chemical vapor deposition

(5) Chen, Cheng Huan a Yu, Jun Yi a Huang, Teng Hsing a Chang, Liuwen a Chou, Mitch M C a

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; LATTICE MISMATCH; LITHIUM COMPOUNDS; MORPHOLOGY; OXIDE MINERALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ADATOM MOBILITIES; EPITAXIALLY GROWN; HIGH ANISOTROPY; KINETIC FACTORS; LATERAL GROWTH; LOW GROWTH TEMPERATURE; LOW TEMPERATURES; M-PLANE;

GROWTH RATE;

EID: 77956328276 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/13377097 Document Type: Conference Paper

Times cited : (3)

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