HF/H2 O2 etching for removal of damage layer on as-transferred Si layer formed by ion-cut process

Electrochemical and Solid-State Letters

Volumn 13, Issue 7, 2010, Pages

  Ho, C C ^a   Huang, C H ^a   Chen, B S ^a   Su, Y H ^a   Chen, K J ^a   Hsu, C S ^a   Lee, T H ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DAMAGE-FREE; ETCHING RATE; HYDROGEN BLISTERING; ION-CUT PROCESS; LAYER TRANSFER; MICRO VOIDS; ROOT MEAN SQUARE ROUGHNESS; SI LAYER; SI WAFER; SURFACE-TO-VOLUME RATIO; TRANSFERRED LAYER;

ETCHING; HYDROGEN; SILICON; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77956217672     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3397476     Document Type: Article

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