Passivation and etching of wafer surfaces in HF-H2O2-IPA solutions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 10, 2002, Pages 5881-5886

  Eom, Dae Hong ^a   Kim, Ky Sub ^b   Park, Jin Goo ^a  

^a Hanyang University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

Contact hole clean; Etching behavior; HF last cleaning; HF H2O2 IPA solution; Noble metal removal; Particle removal efficiency; Surface wettability

Indexed keywords

ADDITIVES; ATOMIC FORCE MICROSCOPY; CLEANING; CONTAMINATION; COPPER; ETCHING; HYDROFLUORIC ACID; MASS SPECTROMETRY; PARTICLES (PARTICULATE MATTER); PASSIVATION; RATE CONSTANTS; WETTING;

CONTACT HOLE CLEAN; INDUCTIVELY COUPLED PLASMA MASS SPECTROMETRY; NOBLE METAL REMOVAL; PARTICLE REMOVAL EFFICIENCY; SURFACE WETTABILITY;

SILICON WAFERS;

EID: 0036820277     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5881     Document Type: Article

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