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Volumn 91, Issue 20, 2007, Pages

Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer

Author keywords

[No Author keywords available]

Indexed keywords

FILM THICKNESS; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

EID: 36248958040     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2806913     Document Type: Article
Times cited : (6)

References (12)
  • 6
    • 36248966071 scopus 로고    scopus 로고
    • Ph.D. thesis, Duke University
    • T.-H. Lee, Ph.D. thesis, Duke University, 1998.
    • (1998)
    • Lee, T.-H.1
  • 7
    • 36249003680 scopus 로고    scopus 로고
    • Proceeding of The Eighth International Symposium on Silicon-on-Insulator Technology and Device, 192nd ECS Meeting, Paris, France
    • T.-H. Lee, Q.-Y. Tong, Y. S. Kim, and U. Goesele, Proceeding of The Eighth International Symposium on Silicon-on-Insulator Technology and Device, 192nd ECS Meeting, Paris, France, 1998, p. 27.
    • (1998) , pp. 27
    • Lee, T.-H.1    Tong, Q.-Y.2    Kim, Y.S.3    Goesele, U.4
  • 8
    • 0036454614 scopus 로고    scopus 로고
    • Proceeding of 2002 IEEE International SOI Conference
    • J. T. S. Lin, J. Peng, and T.-H. Lee, Proceeding of 2002 IEEE International SOI Conference, 2002, p. 189.
    • (2002) , pp. 189
    • Lin, J.T.S.1    Peng, J.2    Lee, T.-H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.