Energy contamination control during ion beam deceleration for low energy ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 221-224

  Wan, Zhimin ^a   Chen, Jiong ^a   Tang, Daniel ^a   Chen, Linuan ^a  

^a Advanced Ion Beam Technology   (United States)

Author keywords

Annealing; Boron; Contamination; Implants; Ion beams; Ion implantation; Magnetic fields; Particle beams; Space charge; Space technology

Indexed keywords

ANNEALING; BORON; CHARGE TRANSFER; CONTAMINATION; DENTAL PROSTHESES; ELECTRIC SPACE CHARGE; ION IMPLANTATION; IONS; MAGNETIC FIELDS; NEUTRONS; PARTICLE BEAMS;

BEAM DECELERATIONS; ELECTRICAL AND MAGNETIC FIELDS; ENERGY CONTAMINATION; LOW ENERGY ION BEAM; LOW ENERGY ION IMPLANTATION; SPACE CHARGE LIMIT; SPACE TECHNOLOGIES; ULTRALOW ENERGY ION IMPLANTATION;

ION BEAMS;

EID: 84904600205     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257978     Document Type: Conference Paper

References (9)

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3. J.G. England, et al., US Patent 5969366: Ion Implanter With Post Mass Selection Deceleration, 1999.
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7. Amir Al-Bayati, Great Silicon Valley Implanter User Group Meeting, Sunnyvale, California, July, 2002.
8. B. Adibi, US Patent 5883391: Ion Implantation Apparatus And A Method Of Monitoring High Energy Neutral Contamination In An Ion Implantation Process, 1999.
9. Amir Al-Bayati, et al. "Junction Profiles of Sub keV Ion Implantation for Deep Sub-quarter Micron Devices", Proceedings of the 13th IIT, Alpbach, Austria, Sep., 2000, pp. 87-90.