18.2% (AM1.5) efficient GaAs solar cell on optical-grade polycrystalline Ge substrate

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 31-36

  Venkatasubramanian, R ^a   O'Quinn, B C ^a   Hills, J S ^a   Sharps, P R ^a   Timmons, M L ^a   Hutchby, J A ^a   Field, H ^a   Ahrenkiel, R ^a   Keyes, B ^a  

^a RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL ORIENTATION; ELECTRIC CURRENTS; GERMANIUM; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; THERMAL EFFECTS;

DARK CURRENTS; MINORITY CARRIER; OPEN CIRCUIT VOLTAGE; PHOTOCARRIER RECOMBINATION; POLYCRYSTALLINE TEMPLATE;

SOLAR CELLS;

EID: 0030408446     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.563940     Document Type: Conference Paper

References (0)