High performance and stability of double-gate HfInZnO thin-film transistors under illumination

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 960-962

  Park, Joon Seok ^a   Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Jung, Ji Sim ^b   Lee, Kwang Hee ^a   Maeng, Wan Joo ^a   Kim, Hyun Suk ^a   Kim, Eok Su ^a   Park, Kyung Bae ^a   Seon, Jong Baek ^a   Kwon, Jang Yeon ^b   Ryu, Myung Kwan ^a   Lee, Sangyun ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Double gate; hafnium indium zinc oxide (HIZO); thin film transistor (TFT)

Indexed keywords

BIAS STRESS; BOTTOM GATE; DOUBLE GATE; DOUBLE-GATE STRUCTURES; EFFECTIVE SUPPRESSION; FIELD-EFFECT MOBILITIES; GATE CONFIGURATION; HIGH STABILITY; INDIUM ZINC OXIDES; SUB-THRESHOLD CURRENT; SUBTHRESHOLD SWING; TOP GATE; VISIBLE LIGHT;

HAFNIUM; HAFNIUM OXIDES; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77956176286     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2051407     Document Type: Article

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