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Volumn 114, Issue 34, 2010, Pages 14427-14432

GISAXS characterization of order in hexagonal monolayers of FePt nanocrystals

Author keywords

[No Author keywords available]

Indexed keywords

CLOSE-PACKED MONOLAYERS; FEPT-NANOCRYSTALS; GI-SAXS; GRAZING INCIDENCE SMALL-ANGLE X-RAY SCATTERING; LANGMUIR-BLODGETT; LANGMUIRS; NANOCRYSTAL FILMS; SEM; SILICON SUBSTRATES; SUPER-LATTICE FILMS;

EID: 77956137330     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp1047979     Document Type: Article
Times cited : (55)

References (57)
  • 1
  • 44
    • 77956148893 scopus 로고    scopus 로고
    • {10} of the LB and LS transferred films follow the 1, √3, √4, √7 series characteristic of a hexagonally packed nanocrystals
    • {10} of the LB and LS transferred films follow the 1, √3, √4, √7 series characteristic of a hexagonally packed nanocrystals
  • 45
    • 77956140944 scopus 로고    scopus 로고
    • A lattice constant, a = 10.16 nm, was used in the model to fit the experimental data of the spin-coated film
    • A lattice constant, a = 10.16 nm, was used in the model to fit the experimental data of the spin-coated film.
  • 46
    • 77956145458 scopus 로고    scopus 로고
    • The model may be extended to capture multilayers by considering a structure factor in 3D as opposed to 2D. This will be addressed in a future paper with specific details regarding the programing of the model
    • The model may be extended to capture multilayers by considering a structure factor in 3D as opposed to 2D. This will be addressed in a future paper with specific details regarding the programing of the model.
  • 49
    • 77956163068 scopus 로고    scopus 로고
    • note
    • The critical angle of total external reflection for Si, Rc = [(re/π)(hc/ E)2(F/m)ne]1/2, was theoretically calculated at E = 10 keV where re describes the classical electron radius (2.81794 × 10-15 m), F is the density of silicon (2330 kg/m3), h is Planck's constant (4.135667 × 10-15 eV·s), c is the speed of light (299 792 458 m/s), m is the average molecular mass of Si (4.663714 × 10-26 kg/molecule), and ne is the number of electrons per Si atom (14).48
  • 56
    • 67749094831 scopus 로고    scopus 로고
    • Frenkel, D. Nature 2009, 460, 465-466.
    • (2009) Nature , vol.460 , pp. 465-466
    • Frenkel, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.