Integrated gate driver circuit using a-Si TFT

IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

Volumn , Issue 2, 2005, Pages 1023-1025

  Wei, Chun Ching ^a   Lin, Wei Chung ^a   Lo, Shih Hsun ^a   Chang, Chun Jong ^a   Wu, Yang En ^a  

^a AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); NETWORKS (CIRCUITS); OPTIMIZATION; SHIFT REGISTERS;

A-SI GATE DRIVER CIRCUIT; CIRCUIT OPERATION VOLTAGES;

AMORPHOUS SILICON;

EID: 33644584221     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Ryoji Oritsuki et al., "Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation", J. J. Appl. Phys. Vol.30, No.12B, December, 1991, pp.3719-3723
2. R.B.Wehrspohn et al., "Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors", J. Appl. Phys. Vol.87, No.1, pp. 144-154
3. R. B. Wehrspohn et al., "Kinetics of defect creation in amorphous silicon thin film transistors", J. Appl. Phys. Vol.93, No.9, pp.5780-5788