Integrated gate driver using highly stable a-Si TFT's

IDW/AD'05 - Proceedings of the 12th International Display Workshops in Conjunction with Asia Display 2005

Volumn , Issue 2, 2005, Pages 1077-1080

  Chun, Mindoo ^a   Jang, Yong Ho ^a   Yoon, Soo Young ^a   Kim, Binn ^a   Cho, Hyung Nyuck ^a   Choi, Seung Chan ^a   Cho, Nam Wook ^a   Kim, Hae Yeol ^a   Kim, Sung Ki ^a   Kim, Chang Dong ^a   Chung, In Jae ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

CLAMPING VOLTAGE; INTEGRATED GATE DRIVER; SI TFT;

INTEGRATED CIRCUITS;

EID: 33644610376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. M. Akiyama et al, "An Active Matrix LCD with Integrated Driver Circuits Using a-Si TFTs", Japan Display, pp. 212-215 (1986).
2. F.P. Cuomo et al, "Sub-Notebook a-Si Color SVGA Display with Integrated Drivers", SID Digest, pp. 967-970 (1998).
3. C. Hordequin et al, Eurodisplay 2002, "A 1"VGA LC Light Valve Using a-Si:H TFTs with Integrated Drivers" pp. 387-390 (2002).
4. H. Lebrun et al, "Threshold Voltage Drift of Amorphous Si TFT in Integrated Drivers for Active Matrix LCDs", Eurodisplay 2002, pp. 83-85 (2002).
5. J. Jeon et al, "Integrated a-Si Gate Driver Circuit forTFT-LCD Panel", SID04 DIGEST, p10-13
6. Jang Y.H. et al, "Integrated Gate Driver Circuit Using a-Si TFT with Dual Pull-down Structure", IDW Digest 04, p333 (2004).
7. Yoon S.Y. et al, "Highly Stable Integrated Gate Driver Circuit using a-Si TFT with Dual Pull-down Structure", SID Digest, p.348 (2005)
8. W.B. Jackson et al, "Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon", Phys. Rev. B.39, pp. 1164-1179 (1989).
9. R.B. Wehrspohn et al, "Kinetics of defect creation in amorphous silicon thin film transistors", J. Appl. Phys. 93, pp. 5780-5788 (2003).