DC-gate-bias stressing of a-Si:H TFTs fabricated at 150°C on polyimide foil

IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1667-1671

  Gleskova, Helena ^b   Wagner, Sigurd ^a,b  

^a IEEE   (United States)

^b Princeton University   (United States)

Author keywords

Amorphous materials; Plasma CVD; Plastic films; Stability; Thin film transistors

Indexed keywords

BIAS STRESSING; ELECTRICAL STABILITY; PLASMA CHEMICAL VAPOR DEPOSITION; POLYIMIDE FOIL;

AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; GATES (TRANSISTOR); PLASTIC FILMS; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRESSES; TEMPERATURE; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 0035424162     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.936588     Document Type: Article

References (21)

1. Active-matrix liquid-crystal displays
2. Characterization of instability in amorphous silicon thin-film transistors
3. Charge trapping instabilities in amorphous silicon-silicon nitride thin-film transistors
4. Threshold voltage shifts in amorphous silicon thin film transistors
5. Resolution of amorphous silicon thin-film transistor instability mechanisms using ambipolar transistors
6. Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors
7. Creation of near-interface defects in hydrogenated amorphous silicon-silicon nitride heterojunctions: The role of hydrogen
8. Bias stress induced instabilities in amorphous silicon nitride/crystalline silicon and amorphous silicon nitride/amorphous silicon structures
9. Bias-stress-induced stretch-exponential time dependence of charge injection and trapping in amorphous thin-film transistors
10. Defect creation in the accumulation layer of a-Si: H thin-film transistors
11. Amorphous-silicon thin-film transistors: Physics and properties
12. Studies of subthreshold and leakage current in amorphous silicon thin film transistors
13. A-Si: H TFTs made on polyimide foil by PECVD at 150°C
14. 150 °C amorphous silicon thin-film transistor technology for polyimide substrates
15. Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates
16. Stability of a-Si: H TFTs fabricated at 150°C
17. The effect of surface states and fixed charge on the field effect conductance of amorphous silicon
18. The physics of amorphous-silicon thin-film transistors
19. Theoretical analysis of amorphous-silicon field-effect transistors
20. Physics of amorphous silicon based alloy field-effect transistors
21. Electrical properties of amorphous silicon transistors and MIS devices: Comparative study of top nitride and bottom nitride configurations