Reliability of 50 nm low-noise metamorphic HEMTs and LNAs

Electronics Letters

Volumn 41, Issue 12, 2005, Pages 699-701

  Dammann, M ^a   Leuther, A ^a   Tessmann, A ^a   Massler, H ^a   Mikulla, M ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC POTENTIAL; ELECTRON BEAM LITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

LOW-NOISE APPLICATION (LNA); STRESS TEST; TRANSISTOR SHIFT; VOLTAGE SHIFT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 21544464310     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050838     Document Type: Article

References (7)

1. Tessmann, A., et al.: 'A 220 GHz metamorphic HEMT amplifier MMIC'. IEEE Compound Semiconductor Integrated Circuit Symp., 2004, pp. 297-300
2. Tessmann, A., et al.: 'A coplanar 94 GHz low-noise amplifier MMIC using 0.07 um metamorphic cascode HEMTs'. IEEE MTT-S Int. Microw. Symp., 2003, pp. 1581-1584
3. Chou, Y.C., et al.: 'High reliability of 0.07 μm pseudomorphic InGaAs/InAIAs/InP HEMT MMICs on 3-inch InP substrates'. Indium Phosphide and Related Materials Conf., 2002, pp. 365-368
4. Dammann, M., et al.: 'Reliability of 70 nm metamorphic HEMTs', Microelectron. Reliab., 2004, 44, pp. 939-943
5. Leuther, A., et al.: '70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers'. Indium Phosphide and Related Materials Conf., 2003, pp.215-218
6. Marsetz, W., et al.: 'Influence of layout and packaging on the temperature of GaAs power HEMTs'. European Microwave Conf., 1998, pp. 439-442
7. Fukai, Y.K., et al.: 'Bias acceleration model of drain resistance degradation in InP-based HEMTs'. IEEE Int. Reliability Physics Symp., 2003, pp. 324-328