A submillimeter-wave HEMT amplifier module with integrated waveguide transitions operating above 300 GHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 56, Issue 6, 2008, Pages 1380-1388

  Samoska, Lorene ^a,b   Deal, William R ^a,c   Chattopadhyay, Goutam ^a,b   Pukala, David ^b   Fung, Andy ^a,b   Gaier, Todd ^b   Soria, Mary ^b   Radisic, Vesna ^a,c   Mei, Xiaobing ^a,c   Lai, Richard ^a,c  

^a IEEE

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Amplifier; HEMT; Millimeter wave; Monolithic millimeter wave integrated circuit (MMIC); Sub millimeter wave

Indexed keywords

ARCHITECTURAL DESIGN; CALCIUM; CURVE FITTING; ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; MICROELECTRONICS; MICROWAVE AMPLIFIERS; MICROWAVE CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PAPER; PROCESS DESIGN; PROCESS ENGINEERING; SUBMILLIMETER WAVES; WAVEGUIDE TRANSFORMERS; WAVES;

(E ,3E) PROCESS; (HI-BI) WAVEGUIDE; AMPLIFIER DESIGNS; AMPLIFIER MODULES; CHANNEL DESIGNS; DESIGN RULES; FREQUENCY RANGING; GA TE LENGTHS; INPUT AND OUTPUT (I/O); INTEGRATED MODULES; MONOLITHICALLY INTEGRATED; NORTHROP GRUMMAN CORPORATION (CO); RADIAL PROBES; RADIO FREQUENCY (RF) SIGNALS; SINGLE CHIPS; SUB-MILLIMETER WAVES; TRANSMISSION LINE (TL); WAVEGUIDE TRANSITIONS; WIRE BOND (WB);

WAVEGUIDES;

EID: 45249114166     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2008.923353     Document Type: Article

References (23)

1. D. Dawson, L. Samoska, A. K. Fung, K. Lee, R. Lai, R. Grundbacher, P. H. Liu, and R. Raja, "Beyond G-band: A 235 GHz InP MMIC amplifier," IEEE Microw. Wireless Compon. Lett., vol. 15, no. 12, pp. 874-876, Dec. 2005.
2. A. Tessmann, "220 GHz metamorphic HEMT amplifier MMICs for high resolution imaging applications," IEEE J. Solid-State Circuits, vol. 40, no. 10, pp. 2070-2076, Oct. 2005.
3. W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, and R. Lai, "A 245-GHz MMIC amplifier with 80- μm output periphery and 12-dB gain," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 329-332.
4. A. Tessmann, A. Leuther, H. Massler, W. Bronner, M. Schlechtweg, and G. Weimann, "Metamorphic H-band low-noise amplifier MMICs," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 353-356.
5. W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, and R. Lai, "Demonstration of a 270-GHz MMIC amplifier using 35-nm InP HEMT technology," lEEE Microw. Wireless Compon. Lett., vol. 17, no. 5, pp. 391-393, May 2007.
6. W. R. Deal, S. Din, V. Radisic, J. Padilla, X. B. Mei, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, and R. Lai, "Demonstration of a sub-millimeter wave integrated circuit (S-MMIC) using InP HEMT with a 35-nm gate," in IEEE Compound Semiconduct. Integr. Circuits Conf., Nov. 2006, pp. 33-36.
7. X. B. Mei, W. Yoshida, W. R. Deal, P. H. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, D. Li, M. Barsky, Y. M. Kim, M. Lange, T. P. Chin, V. Radisic, T. Gaier, A. Fung, L. Samoska, and R. Lai, "35 nm InP HEMT SMMIC amplifier with 4.4-dB gain at 308 GHz," IEEE Electron Device Lett., vol. 28, no. 6, pp. 470-472, Jun. 2007.
8. D. Pukala, L. Samoska, T. Gaier, A. Fung, X. B. Mei, W. Yoshida, J. Lee, J. Uyeda, P. H. Liu, W. R. Deal, and V. Radisic, "Submillimeter-wave InP MMIC amplifiers from 300-345 GHz," IEEE Microw. Wireless Compon. Lett., vol. 18, no. 1, pp. 61-63, Jan. 2008.
9. W. R. Deal, X. B. Mei, V. Radisic, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, T. Gaier, A. Fung, L. Samoska, and R. Lai, "Demonstration of a S-MMIC LNA with 16-dB gain at 340 GHz," in IEEE Compound Semiconduct. Integr. Circuits Symp., Oct. 2007, pp. 1-4.
10. V. Radisic, X. B. Mei, W. R. Deal, W. Yoshida, P. H. Liu, J. Uyeda, M. Barsky, L. Samoska, A. Fung, T. Gaier, and R. Lai, "Demonstration of sub-millimeter wave fundamental oscillators using 35-nm InP HEMT technology," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 3, pp. 223-225, Mar. 2007.
11. A. K. Fung, D. Dawson, L. Samoka, K. Lee, C. Oleson, and G. Boll, "On-wafer vector network analyzer measurements in the 220-325 GHz frequency band," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. 1931-1934.
12. A. Tessmann, A. Leuther, M. Kuri, H. Massler, M. Riessle, H. Essen, S. Stanko, R. Sommer, M. Zink, W. Reinert, and M. Schlechtweg, "220 GHz low-noise amplifier modules for radiometric imaging applications," in Proc. 1st Eur. Microw. Integr. Circuits Conf., Manchester, U.K., Sep. 2006, pp. 137-140.
13. Y. C. Leong and S. Weinreb, "Fullband waveguide-to-microstripprobe transitions," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 1999, pp. 1435-1438.
14. S. Weinreb, T. Gaier, R. Lai, M. Barsky, Y. C. Leong, and L. Samoska, "High gain 150-215 GHz MMIC amplifier with integral waveguide transitions," IEEE Microw. Guided Wave Lett., vol. 9, no. 7, pp. 282-284, Jul. 1999.
15. L. Samoska, A. Peralta, M. Hu, M. Micovic, and A. Schmitz, "A 20 mW, 150 GHz InP HEMT MMIC power amplifier module," IEEE Microw. Wireless Compon. Lett, vol. 14, no. 2, pp. 56-58, Feb. 2004.
16. P. Huang, R. Lai, R. Grundbacher, and B. Gorospe, "A 20 mW G-band monolithic driver amplifier using 0.07 μm InP HEMT," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2006, pp. 806-809.
17. R. Raja, M. Nishimoto, B. Osgood, M. Barsky, M. Sholley, R. Quon, G. Barber, P. Liu, R. Lai, F. Hinte, G. Haviland, and B. Vacek, "A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program," in IEEE MTT-S Int. Microw. Symp. Dig., May 2001, pp. 1955-1958.
18. J. W. Kooi, G. Chattopadhyay, S. Withington, F. Rice, J. Zmuidzinas, C. Walker, and G. Yassin, "A full-height waveguide-to-thin-film microstrip transition with exceptional RF bandwidth and coupling efficiency," Int. J. Infrared Millimeter Waves, vol. 24, no. 3, pp. 261-284, 2003.
19. R. L. Eisenhart and P. H. Khan, "Theoretical and experimental analyses of a waveguide mounting structure," IEEE Trans. Microw. Theory Tech., vol. MTT-19, no. 8, pp. 706-717, Aug. 1971.
20. C.-Y. Tong, R. Blundell, and S. Paine, "Design and characterization of a 250-350 GHz fixed tuned superconductor-insulator-superconductor receiver," IEEE Trans. Microw. Theory Tech., vol. 44, no. 9, pp. 1548-1556, Sep. 1996.
21. 2 Nb/AlOx/Nb tunnel junction," Int. J. Infrared Millimeter Waves, vol. 15, no. 5, May 1994.
22. J. W. Kooi, A. Kovacs, M. C. Sumner, G. Chattopadhyay, R. Ceria, D. Miller, B. Bumble, R. LeDuc, J. Stern, and T. G. Phillips, "A wide IF bandwidth 275-425 GHz tunerless waveguide receiver based on AlN SIS technology," IEEE Trans. Microw. Theory Tech., vol. 55, no. 10, pp. 2086-2096, Oct. 2007.
23. A. Fung, D. Dawson, L. Samoska, K. Lee, T. Gaier, P. Kangaslahti, C. Oleson, A. Denning, Y. Lau, and G. Boll, "Two port vector network analyzer measurements in the 218-344 and 356-500 GHz frequency bands," IEEE Trans. Microw. Theory Tech., vol. 54, no. 12, pt. 2, pp. 4507-4512, Dec. 2006.