Molecular beam epitaxy of Al0.48In0.52As/Ga0.47In0.53As heterostructures on metamorphic AlxGayIn1-x-yAs buffer layers

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 1028-1032

  Haupt, M ^a   Kohler K ^a   Ganser, P ^a   Muller S ^a   Rothemund, W ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

AlInAs GaInAs heterostructures; Metamorphic growth; Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ALUMINUM INDIUM ARSENIDE; GALLIUM INDIUM ARSENIDE; METAMORPHIC GROWTH;

HETEROJUNCTIONS;

EID: 0031141328     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01013-5     Document Type: Article

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