3S/mm extrinsic transconductance of InP-based high electron mobility transistor by vertical and lateral scale-down

Electronics Letters

Volumn 42, Issue 15, 2006, Pages 883-884

  Matsuzaki, H ^a   Maruyama, T ^b   Enoki, T ^a   Tokumitsu, M ^a  

^a NTT CORPORATION   (Japan)

^b NTT Advance Technology Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; INDIUM COMPOUNDS; OHMIC CONTACTS; THERMAL EFFECTS; TRANSCONDUCTANCE;

ELECTRON MOBILITY TRANSISTORS; GATE-TO-OHMIC DISTANCE; ROOM TEMPERATURE;

TRANSISTORS;

EID: 33746338850     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061962     Document Type: Article

References (4)

1. T of 562GHz ', IEEE Electron Device Lett., 2002, 23, p. 573-575 0741-3106
2. Duh, K.H.G., Chao, P.C., Liu, S.M.J., Ho, P., Kao, M.Y., and Ballingall, J.M.: ' A super low-noise 0.1m T-gate InAlAs-InGaAs-InP HEMT ', IEEE Microw. Guide. Wave Lett., 1991, 1, p. 114-116
3. T ', Tech. Dig. Int. Electron Devices Meet. (IEDM 2005), 2005, p. 795-798
4. Suemitsu, T., Enoki, T., Yokoyama, H., and Ishii, Y.: ' Improved recessed- gate structure for sub-0.1-m-gate InP-based high electron mobility transistors ', Jpn. J. Appl. Phys., 1998, 37, p. 1365-1372 0021-4922