Parallel-aligned GaAs nanowires with 〈110〉 orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode

Nanotechnology

Volumn 21, Issue 9, 2010, Pages

  Zhang, Guoqiang ^a   Tateno, Kouta ^a   Gotoh, Hideki ^a   Nakano, Hidetoshi ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; GALLIUM ARSENIDE; NANOWIRES;

COLLOIDAL PARTICLE; DOT ARRAY; GAAS NANOWIRES; GROWTH MECHANISMS; VAPOR LIQUID SOLIDS;

SEMICONDUCTING GALLIUM;

EID: 77955874102     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/9/095607     Document Type: Article

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