Electrical properties of Mg-doped GaN and AlxGa1-xN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Komissarova, Tatiana A ^a   Jmerik, Valentin N ^a   Mizerov, Andrey M ^a   Shmidt, Nataliya M ^a   Ber, Boris Ya ^a   Kasantsev, Dmitry Yu ^a   Ivanov, Sergey V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ACTIVATION; ALLOY COMPOSITIONS; C-SAPPHIRE; ELECTRICAL PROPERTY; GAN LAYERS; GAN: MG; GENERAL TRENDS; HOPPING MECHANISM; METAL-ORGANIC VAPOR PHASE EPITAXY; MG FLUX; MG-DOPED; MOVPE; P-TYPE CONDUCTIVITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; ALUMINUM; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SECONDARY BATTERIES;

HOLE CONCENTRATION;

EID: 77955838540     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880939     Document Type: Article

References (22)

1. S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys., Part 2 30, L1998 (1991).
2. O.H. Nam, K.H. Ha, S.N. Lee, H.Y. Ryu, T. Jamg, J.K. Son, H.S. Paek, Y.J. Sung, K.S. Sim, H.G. Kim, S.H. Chae, Y.H. Kim, K.K. Choi, J.H. Chae, T. Sakong, and Y.J. Park, Proc. Int. Workshop on Nitride Semicond. 2006 (Kyoto, Japan, 2006) p. 70; Compd. Semiconductor 13(3), 10 (2007).
3. S.C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000).
4. H. Xing, S. Keller, Y. F. Wu, L. McCarthy, I. P. Smorchkova, D. Buttari, R. Coffie, D. S. Green, G. Parish, S. Heikman, L. Shen, N. Zhang, J. J. Xu, B. P. Keller, S. P. Den-Baars, and U. K. Mishra, J. Phys.: Condens. Matter 13, 7139 (2001).
5. S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 2 31, L1708 (1991).
6. L.T. Romano, M. Kneissl, J.E. Northrup, C.G. Van de Walle, and D.W. Treat, Appl. Phys. Lett. 79, 17, 2734 (2001).
7. I.P. Smorchkova, E. Haus, B. Heying, P. Kozodoy, P. Fini, J.P. Ibbetson, S. Keller, S.P. DenBaars, J.S. Speck, and U.K. Mishra, Appl. Phys. Lett. 76, 718 (2000).
8. E. Monroy, T. Andreev, P. Holliger, E. Bellet-Amalric, T. Shibata, M. Tanaka, and B. Daudin, Appl. Phys. Lett. 84, 14, 2554 (2004).
9. A. Dussaigne, B. Damilano, J. Brault, J. Massies, E. Feltin, and N. Grandjean, J. Appl. Phys. 103, 013110 (2008).
10. A.J. Ptak, T.H. Myers, L.T. Romano, C.G. Van de Walle, and J.E. Northrup, Appl. Phys. Lett. 78, 285 (2001).
11. N.A. Fichtenbaum, C. Schaake, T.E. Mates, C. Cobb, S. Keller, S.P. DenBaars, and U.K. Mishra, Appl. Phys. Lett. 91, 172105 (2005).
12. J. Li, T.N. Order, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang, Appl. Phys. Lett. 80(7), 1210 (2002).
13. S.R. Jeon, Z. Ren, G. Cui, J. Su, M. Gherasimova, J. Han, H.K. Cho, and L. Zhou, Appl. Phys. Lett. 86, 082107 (2005).
14. T. Tanaka, A. Watanabe, H. Amano, Y. Kobayashi, I. Akasaki, S. Yamazaki, and M. Koike, Appl. Phys. Lett. 65(5), 593 (1994).
15. V.N. Jmerik, A.M. Mizerov, T.V. Shubina, and S.V. Ivanov, Tech. Phys. Lett. 33, 333 (2007).
16. S.V. Ivanov, V.N. Jmerik, T.V. Shubina, S.B. Listoshin, A.M. Mizerov, A.A. Sitnikova, M.-H. Kim, M. Koike, B.-J. Kim, and P.S. Kop'ev, J. Cryst. Growth 301/302, 465 (2007).
17. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Appl. Phys. Lett. 72, 2114 (1998).
18. V.N. Jmerik, A.M. Mizerov, A.V. Semenov, T.V. Shubina, A.V. Saharov, T.A. Komissarova, A.A. Sitnikova, P.S. Kop'ev, S. V. Ivanov, N.V. Rzheutskii, A.V. Danilchik, E.V. Lutsenko, and G.P. Yablonskii, Semicond. 12 (2008), in print.
19. E. Haus, I.P. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, U.K. Mishra, and J.S. Speck, J. Cryst. Growth 246, 55 (2002).
20. J. Simon and D. Jena, Phys. Status Solidi A (a) 205, 1074 (2008).
21. W. Gotz, R.S. Kern, C.H. Chen, H. Lui, D.A. Steigerwald, and R.M. Fletcher, Mater. Sci. Eng. B 59, 211 (1999).
22. N.F. Mott and E.A. Davis, Electron Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1979).