SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films

(7) Kim, Dong Ho a Lee, Sung Hun a Lee, Gun Hwan a Kim, Hyun Bum b Kim, Kwang Ho b Lee, Yoon Gyu c Yu, Tae Hwan c

a Korea Institute of Material Science (South Korea)

b Pusan National University (South Korea)

c Samsung Corning Co Ltd (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BENEFICIAL EFFECTS; DC MAGNETRON SPUTTERING; DEPOSITION TEMPERATURES; DOPED ZINC OXIDE THIN FILMS; ELECTRICAL PROPERTY; ELECTRICAL TRANSPORT PROPERTIES; FREE CARRIER ABSORPTION; GA-DOPED ZNO; GLASS SUBSTRATES; HIGH TEMPERATURE; HYDROGEN ATOMS; HYDROGEN CONTENTS; HYDROGEN DOPING; HYDROGEN GAS; HYDROGEN INCORPORATION; INTERSTITIAL HYDROGEN; LATTICE EXPANSION; LOW RESISTIVITY; NEAR-INFRARED RANGE; SHALLOW DONORS; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL STABILITY; VACUUM-ANNEALING;

ATOMS; CARRIER MOBILITY; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM; GALLIUM ALLOYS; GAS ABSORPTION; HYDROGEN; OPTICAL PROPERTIES; OXIDE FILMS; SUBSTRATES; THERMODYNAMIC STABILITY; THIN FILMS; TRANSPORT PROPERTIES; ZINC; ZINC OXIDE;

CARRIER CONCENTRATION;

EID: 77955831682 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456527 Document Type: Article

Times cited : (39)

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