Transistor gating by polar molecular monolayers

Applied Physics Letters

Volumn 97, Issue 5, 2010, Pages

  Shaya, O ^a   Einati, H ^a   Fishelson, N ^a   Shacham Diamand, Y ^a   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMINE GROUPS; CURRENT-VOLTAGE MEASUREMENTS; DIELECTRIC LAYER; FIELD-EFFECT; HYBRID SILICON; KELVIN PROBE FORCE MICROSCOPY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOLECULAR LAYER; MOLECULAR MONOLAYER; SELF-ASSEMBLED;

ELECTRON ENERGY LEVELS; MONOLAYERS; MOSFET DEVICES; ORGANIC COMPOUNDS; SEMICONDUCTING SILICON;

FIELD EFFECT TRANSISTORS;

EID: 77955734126     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3476337     Document Type: Article

References (16)

1. A. Vilan and D. Cahen, Trends Biotechnol. TRBIDM 0167-7799 20, 22 (2002). 10.1016/S0167-7799(01)01839-X (Pubitemid 34015905)
2. M. J. Schöning and A. Poghossian, Analyst (Cambridge, U.K.) ANALAO 0003-2654 127, 1137 (2002). 10.1039/b204444g
3. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. ADVMEW 0935-9648 11, 605 (1999). 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0. CO;2-Q
4. G. M. Rangger, L. Romaner, G. Heimel, and E. Zojer, Surf. Interface Anal. SIANDQ 0142-2421 40, 371 (2008). 10.1002/sia.2645 (Pubitemid 351570094)
5. J. J. Gooding, F. Mearns, W. Yang, and J. Liu, Electroanalysis ELANEU 1040-0397 15, 81 (2003). 10.1002/elan.200390017
6. O. Shaya, M. Shaked, A. Doron, A. Cohen, I. Levy, and Y. Rosenwaks, Appl. Phys. Lett. APPLAB 0003-6951 93, 043509 (2008). 10.1063/1.2958343
7. O. Shaya, M. Shaked, Y. Usherenko, E. Halpern, G. Shalev, A. Doron, I. Levy, and Y. Rosenwaks, J. Phys. Chem. C JPCCCK 1932-7447 113, 6163 (2009). 10.1021/jp900382v
8. D. Landheer, G. Aers, W. R. McKinnon, M. J. Deen, and J. C. Ranuarez, J. Appl. Phys. JAPIAU 0021-8979 98, 044701 (2005). 10.1063/1.2008354 (Pubitemid 41345044)
9. Y. Paska and H. Haick, Appl. Phys. Lett. APPLAB 0003-6951 95, 233103 (2009). 10.1063/1.3266858
10. D. Cahen, R. Naaman, and Z. Vager, Adv. Funct. Mater. AFMDC6 1616-301X 15, 1571 (2005). 10.1002/adfm.200500187 (Pubitemid 41454584)
11. A. Natan, L. Kronik, H. Haick, and R. T. Tung, Adv. Mater. ADVMEW 0935-9648 19, 4103 (2007). 10.1002/adma.200701681 (Pubitemid 350254783)
12. E. Capua, A. Natan, L. Kronik, and R. Naaman, ACS Applied Materials and Interfaces 1, 2679 (2009). 10.1021/am9005622
13. T. He, J. He, M. Lu, B. Chen, H. Pang, W. F. Reus, W. M. Nolte, D. P. Nackashi, P. D. Franzon, and J. M. Tour, J. Am. Chem. Soc. JACSAT 0002-7863 128, 14537 (2006). 10.1021/ja063571l (Pubitemid 44749853)
14. G. Shalev, A. Cohen, A. Doron, A. Machauf, M. Horesh, U. Virobnik, D. Ullien, and I. Levy, Sensors SNSRES 0746-9462 9, 4366 (2009). 10.3390/s90604366
15. H. Einati, A. Mottel, A. Inberg, and Y. Shacham-Diamand, Electrochim. Acta ELCAAV 0013-4686 54, 6063 (2009). 10.1016/j.electacta.2009.02.090
16. Ch. Sommerhalter, Th. W. Matthes, Th. Glatzel, A. Jäeger-Waldau, and M. Ch. Lux-Steiner, Appl. Phys. Lett. APPLAB 0003-6951 75, 286 (1999). 10.1063/1.124357