Standard CMOS fabrication of a sensitive fully depleted electrolyte-insulator-semiconductor field effect transistor for biosensor applications

Sensors

Volumn 9, Issue 6, 2009, Pages 4366-4379

  Shalev, Gil ^a   Cohen, Ariel ^a   Doron, Amihood ^a   Machauf, Andrew ^a   Horesh, Moran ^a   Virobnik, Udi ^a   Ullien, Daniela ^a   Levy, Ilan ^a  

^a INTEL CORPORATION   (Israel)

Author keywords

Biosensors; CMOS; EISFET; Fully depleted

Indexed keywords

BIOSENSOR APPLICATIONS; CHEMICAL COMPONENT; DEVICE OPERATIONS; EISFET; ELECTROLYTE-INSULATOR-SEMICONDUCTOR; FULLY DEPLETED; HIGH VOLUME MANUFACTURING; SILICON ON INSULATOR WAFERS;

BIOLOGICAL MATERIALS; CHEMICAL DETECTION; CMOS INTEGRATED CIRCUITS; ELECTROLYTES; FIELD EFFECT TRANSISTORS; SILICON WAFERS; TRANSDUCERS;

BIOSENSORS;

EID: 67649600837     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s90604366     Document Type: Article

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