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Volumn 518, Issue 18, 2010, Pages 5278-5281

Performance study of InAs/GaAs quantum dot covered by graded In xGa1 - XAs layer

(4) Huang, Lirong a Tian, Peng a Yu, Yi a Huang, Dexiu a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

Atomic Force Microscopy; Metal organic chemical vapor deposition; Nanostructures; Photoluminescence; Quantum dots; Strain reducing layer

Indexed keywords

EMISSION SPECTRUMS; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; LUMINESCENCE INTENSITY; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGICAL CHARACTERISTIC; PERFORMANCE STUDY; QUANTUM DOT; STRAIN-REDUCING LAYER;

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; GALLIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS;

VAPOR DEPOSITION;

EID: 77955665702 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.04.032 Document Type: Article

Times cited : (8)

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