Realization of 1.3 μm InAs quantum dots with high-density, uniformity, and quality

Journal of Crystal Growth

Volumn 295, Issue 2, 2006, Pages 162-165

  Amano, Takeru ^a   Sugaya, Takeyoshi ^a   Yamauchi, Shohgo ^a   Komori, Kazuhiro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

BANDWIDTH; OPTICAL COMMUNICATION; OPTICAL SYSTEMS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

FIBER COMMUNICATIONS; GRADIENT COMPOSITION (GC); LOW-DIMENSIONAL STRUCTURES; STRAIN REDUCING LAYER (SRL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748978943     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.08.004     Document Type: Article

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