Quantization effect in capacitance behavior of nanoscale silicon multigate MOSFETs

ECS Transactions

Volumn 19, Issue 4, 2009, Pages 321-327

  Afzalian, Aryan ^a   Lee, Chi Woo ^a   Yan, Ran ^a   Akhavan, Nima Dehdashti ^a   Colinge, Cindy ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; NANOTECHNOLOGY; QUANTUM CHEMISTRY; QUANTUM THEORY;

CAPACITANCE RATIO; CHARGE CENTROID; DENSITY OF STATE; GATE CAPACITANCE; MULTIGATE MOSFETS; OXIDE THICKNESS; QUANTIZATION EFFECTS; QUANTUM SIMULATIONS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 74949099571     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3117425     Document Type: Conference Paper

References (5)

1. Aryan Afzalian, Dimitri Lederer, Chi-Woo Lee, Ran Yan and Jean-Pierre Colinge, « Ultra Scaled MultiGate SOI MOSFETs: Accumulation-Mode vs. Inversion-Mode », Procedding of EuroSOI 2008, Jan. 2008.
2. A. Marchi, E. Gnani, S. Reggiani, M. Rudan, G. Baccarani, "Investigating the performances limits of Silicon-nanowire and carbon-nanotube FETs", Solid-State Electronics 50, pp. 78-85, 2006.
3. N. Neophytou, A. Paul, M.S. Lundstrom, G. Klimeck, "Bandstructure Effects in Silicon Nanowire Electron Transport", IEEE TED, Vol. 55, 2008.
4. R. Kim and M. Lundstrom, "Characteristic Features of 1-D Ballistic Transport in Nanowire MOSFETs", IEEE Trans. Nanotech. 7-6, pp. 787-794, 2009.
5. J.-P. Colinge, A.J. Quinn, L. Floyd, G. Redmond, J.C. Alderman, W. Xiong, CR. Cleavelin, T. Schulz, K. Schruefer, G. Knoblinger, P. Patruno, "Low-Temperature Electron Mobility in Trigate SOI MOSFETs", IEEE Electron Device Letters, Vol. 27, no. 2, pp. 120- 122,2006.