Origin of high-density hole doping and anisotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1636-1641

  Hiramatsu, Hidenori ^a   Kamiya, Toshio ^a,b   Ueda, Kazushige ^a,c   Hirano, Masahiro ^a,b   Hosono, Hideo ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Band structure; Density functional calculation; Doping; Electrical transport; LaCuOSe

Indexed keywords

BAND SCHEME; BOLTZMANN TRANSPORT THEORY; BURSTEIN; DEGENERATE SEMICONDUCTORS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DENSITY-FUNCTIONAL CALCULATIONS; DOPING; DOPING STABILITY; ELECTRICAL TRANSPORT; FIRST-PRINCIPLES CALCULATION; HIGH-DENSITY; HOLE TRANSPORTS; HOLE-DOPING; LACUOSE; LAYERED CRYSTAL STRUCTURE; LAYERED SEMICONDUCTORS; MG CONCENTRATIONS; P TYPE SEMICONDUCTOR; TRANSPORT CALCULATION; WIDE GAP;

ABSORPTION; ANISOTROPY; BAND STRUCTURE; CRYSTAL STRUCTURE; DOPING (ADDITIVES); EPITAXIAL FILMS; LANTHANUM; STATISTICAL MECHANICS;

DENSITY FUNCTIONAL THEORY;

EID: 77955619337     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983728     Document Type: Article

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