Pulsed-chemical vapor deposition of ruthenium and ruthenium dioxide thin films using RuO4 precursor for the DRAM capacitor electrode

ECS Transactions

Volumn 19, Issue 2, 2009, Pages 717-728

  Han, Jeong Hwan ^a   Lee, Sang Woon ^a   Choi, Gyu Jin ^a   Lee, Sang Young ^a   Hwang, Cheol Seong ^a   Dussarrat, Christian ^b   Gatineau, Julien ^b  

^a Seoul National University   (South Korea)

^b AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; FILM THICKNESS; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; MIM DEVICES; OXIDE MINERALS; RUTHENIUM COMPOUNDS; SILICA; SILICON NITRIDE; SILICON OXIDES; THIN FILM CIRCUITS; THIN FILMS; TITANIUM DIOXIDE; TITANIUM NITRIDE;

DRAM CAPACITOR; ELECTRICAL PERFORMANCE; EQUIVALENT OXIDE THICKNESS; GAS SUPPLY RATES; HIGH GROWTH RATE; HOLE STRUCTURES; LOW IMPURITY CONCENTRATIONS; RUTHENIUM DIOXIDE;

GROWTH RATE;

EID: 76549112765     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3122127     Document Type: Conference Paper

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