Low-temperature growth of RuO2 films for conductive electrode applications

Materials Science in Semiconductor Processing

Volumn 5, Issue 2-3, 2002, Pages 173-177

  Frohlich K ^a   Cambel, V ^a   Machajdik D ^a   Baumann, P K ^b   Lindner, J ^b   Schumacher, M ^b   Juergensen, H ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b AIXTRON AG   (Germany)

Author keywords

Conductive oxides; MOCVD; Resistivity

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRODES; FILM GROWTH; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RANDOM ACCESS STORAGE; RUTHENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES;

STRUCTURAL PROPERTIES;

CONDUCTIVE FILMS;

EID: 0036557657     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00101-4     Document Type: Conference Paper

References (4)

1. 2 capacitor heterostructures. Appl Phys Lett. 66:1995;239.
2. 2 dielectrics. Appl Phys Lett. 78:2001;1134.
3. 2 films by metal-organic chemical vapour deposition. J Phys IV 2001;11:Pr3-325.
4. 3 substrate J Cryst Growth. 235:2002;377.